KTC3203 transistor (npn) feature power dissipation p cm: 0.625 w (tamb=25 ) collector current i cm: 0.8 a collector-base voltage v (br)cbo : 35 v operating and storage junction temperature range t stg : -55 to +150 tj: 150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo ic= 100a, i e =0 35 v collector-emitter breakdown voltage v(br) ceo i c = 10 ma , i b =0 30 v emitter-base breakdown voltage v(br) ebo i e = 100a, i c =0 5 v collector cut-off current i cbo v cb = 35v, i e =0 0.1 a emitter cut-off current i ebo v eb = 5v, i c =0 0.1 a h fe(1) v ce =1v, i c = 100ma 100 320 dc current gain h fe(2) v ce =1v, i c = 700ma 35 collector-emitter saturation voltage v ce(sat) i c = 500 ma, i b = 20ma 0.7 v base-emitter voltage v be v ce = 1v, i c = 10ma 0.5 0.8 v transition frequency f t v ce = 5 v, i c = 10ma 120 mhz classification of h fe(1) rank o y range 100-200 160-320 1 2 3 to-92 1. emitter 2. collector 3. base KTC3203 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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